منابع مشابه
A Structural Investigation of Ga32xIn51xSn2O16
The structure of the recently reported transparent conductor, Ga32xIn51xSn2O16 (0.3(x(1.6), was established by a combination of high-resolution electron microscopy, convergent-beam electron diffraction, and Rietveld analysis of powder diffraction data (X-ray and time-of-flight neutron methods). This ‘‘T-phase’’ compound has an anion-deficient fluorite-derivative structure whose space group is I...
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ژورنال
عنوان ژورنال: SSRN Electronic Journal
سال: 2014
ISSN: 1556-5068
DOI: 10.2139/ssrn.2487823